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PDF EMH1303 Data sheet ( Hoja de datos )

Número de pieza EMH1303
Descripción P-Channel Power MOSFET
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! EMH1303 Hoja de datos, Descripción, Manual

Ordering number : ENA0661A
EMH1303
P-Channel Power MOSFET
–12V, –7A, 23mΩ, Single EMH8
http://onsemi.com
Features
Low ON-resistance
1.8V drive
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
Mounted on a ceramic board (1200mm2×0.8mm)
Ratings
--12
±10
--7
--28
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 EMH1303-TL-E
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
0.5
2.0
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
876 5
JC
Lot No.
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2407PE TIIM TC-00000967 No. A0661-1/7

1 page




EMH1303 pdf
Embossed Taping Specication
EMH1303-TL-E
EMH1303
No. A0661-5/7

5 Page










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