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STPLED525 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STPLED525
기능 N-channel Power MOSFET
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STPLED525 데이터시트, 핀배열, 회로
STDLED525, STFILED525,
STPLED525, STULED525
N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET
in DPAK, I2PAKFP, TO-220 and IPAK packages
Datasheet preliminary data
Features
TAB
Order codes VDS
RDS(on)
max
ID PTOT
3
1
DPAK
t(s)TAB
roduc3
2
1
te PTO-220
123
I²PAKFP
TAB
IPAK
3
2
1
oleFigure 1. Internal schematic diagram
bsD(2,TAB)
ct(s) - OG(1)
lete ProduS(3)
Obso AM01476v1
STDLED525
STFILED525
STPLED525
STULED525
525 V
1.5 Ω
5.0 A
70 W
25 W
70 W
100% avalanche tested
Extremely high dv/dt capability
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Applications
LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STDLED525
STFILED525
STPLED525
STULED525
Table 1. Device summary
Marking
Package
LED525
DPAK
I2PAKFP (TO-281)
TO-220
IPAK
Packaging
Tape and reel
Tube
March 2013
DocID024423 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
22




STPLED525 pdf, 반도체, 판매, 대치품
Electrical characteristics
STDLED525, STFILED525, STPLED525, STULED525
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
525
V
IDSS
t(s)IGSS
ucVGS(th)
rodRDS(on)
Zero gate voltage
VDS = 525 V
drain current (VGS = 0) VDS = 525 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V; VDS=0
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.2 A
1 µA
50 µA
10 µA
3 3.6 4.5 V
1.2 1.5 Ω
solete PSymbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
ObCiss
-Coss
t(s)Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
555 pF
- 47 - pF
8.2 pF
ucCoss eq. (1)
Equivalent output
capacitance
VDS = 0 to 420 V, VGS = 0
- 33.5 - pF
rodRg Gate input resistance f=1 MHz open drain
- 4.7 - Ω
PQg Total gate charge
VDD = 420 V, ID = 4.4 A,
teQgs Gate-source charge VGS = 10 V
le Qgd Gate-drain charge
(see Figure 19)
17.5 nC
- 3 - nC
10 nC
o 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
Obs increases from 0 to 80% VDS
Symbol
Parameter
Table 6. Switching times
Test conditions
Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 420 V, ID = 4.4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
9
11
-
29
16
ns
ns
-
ns
ns
4/22 DocID024423 Rev 1

4페이지










STPLED525 전자부품, 판매, 대치품
STDLED525, STFILED525, STPLED525, STULED525
Electrical characteristics
Figure 8. Output characteristics
ID AM08840v1
(A)
10 VGS=10V
7V
8
Figure 9. Transfer characteristics
ID(A)
AM08841v1
7
VDS=15V
6
5
64
6V 3
4
2
2
)5V
t(s0
0 5 10 15 20 25 VDS(V)
1
0
0 1 2 3 4 5 6 7 8 9 VGS(V)
ucFigure 10. Normalized BVDSS vs temperature
rodBVDSS
(norm)
ID=1mA
AM08842v1
te P1.10
ole1.05
Obs1.00
t(s) -0.95
uc0.90
d-75
-25
25
75 125 TJ(°C)
Figure 11. Static drain-source on resistance
RDS(on)
(Ω)
1.45
VGS=10V
AM08843v1
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0
1.0 2.0 3.0 4.0 ID(A)
roFigure 12. Gate charge vs gate-source voltage
te PVGS
(V)
le12
o VDS
Obs 10
VDD=420V
ID=4.4A
AM08844v1
VGS
400
350
300
Figure 13. Capacitance variations
C
(pF)
AM08845v1
1000
Ciss
8 250
100
6 200
150
4 100 10
2 50
Coss
Crss
00
0 5 10 15 20 25 Qg(nC)
1
0.1 1
10 100 VDS(V)
DocID024423 Rev 1
7/22

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부품번호상세설명 및 기능제조사
STPLED525

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics

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