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PDF K1930 Data sheet ( Hoja de datos )
| Número de pieza | K1930 | |
| Descripción | MOSFET ( Transistor ) - 2SK1930 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K1930 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
l High forward transfer admittance : |Yfs| = 2.0 S (typ.)
l Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)
l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
Rating
1000
1000
±20
4
12
80
150
−55~150
Unit
V
V
V
A
W
°C
°C
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch–c)
Rth (ch–a)
1.56
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-09-02
1 page  
2SK1930
5 2002-09-02
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K1930.PDF ] | |
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