|
|
|
부품번호 | STDLED656 기능 |
|
|
기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 22 페이지수
STDLED656, STFILED656,
STPLED656, STULED656
N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET
in DPAK, I2PAKFP, TO-220 and IPAK packages
Datasheet − preliminary data
Features
TAB
Order codes VDS
RDS(on)
max
ID PTOT
3
1
DPAK
t(s)TAB
roduc3
2
1
te PTO-220
123
I²PAKFP
TAB
IPAK
3
2
1
oleFigure 1. Internal schematic diagram
bsD(2,TAB)
ct(s) - OG(1)
lete ProduS(3)
Obso AM01476v1
STDLED656
STFILED656
STPLED656
STULED656
650 V
1.3 Ω
6.0 A
70 W
25 W
70 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STDLED656
STFILED656
STPLED656
STULED656
Table 1. Device summary
Marking
Package
LED656
DPAK
I2PAKFP (TO-281)
TO-220
IPAK
Packaging
Tape and reel
Tube
March 2013
DocID024429 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
22
Electrical characteristics
STDLED656, STFILED656, STPLED656, STULED656
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
t(s)IGSS
cVGS(th)
roduRDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V; VDS=0
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.7 A
0.8 µA
50 µA
±9 µA
3 3.6 4.5 V
1.1 1.3 Ω
te PTable 5. Dynamic
leSymbol
Parameter
Test conditions
Min. Typ. Max. Unit
bsoCiss
OCoss
-Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
895 pF
- 67 - pF
12.5 pF
t(s)Equivalent
cCoss eq. (1) capacitance energy
urelated
VDS = 0 to 520 V, VGS = 0
- 27 - pF
rodRg Gate input resistance f=1 MHz open drain
PQg Total gate charge
VDD = 500 V, ID = 5.4 A,
Qgs Gate-source charge VGS = 10 V
teQgd Gate-drain charge
(see Figure 17)
- 3.5 - Ω
34 nC
- 4 - nC
21 nC
ole1. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Obs Coss when VDS increases from 0 to 80% VDSS
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 325 V, ID = 2.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
14
10
-
44
24
ns
ns
-
ns
ns
4/22 DocID024429 Rev 1
4페이지 STDLED656, STFILED656, STPLED656, STULED656
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
12
VDS
10
8
VDD=500V
ID=5.4A
AM12964v1
VDS
(V)
500
400
RDS(on)
(Ω)
1.35
1.30
1.25
1.20
VGS=10V
AM12965v1
300 1.15
6 1.10
200
4 1.05
2 100
t(s)0 0
0 10 20 30 Qg(nC)
1.00
0.95
0.90
0 1 2 3 4 5 ID(A)
ucFigure 10. Capacitance variations
rodC
(pF)
AM12966v1
Figure 11. Output capacitance stored energy
Eoss
(µJ)
AM12967v1
lete P1000
Ciss
5
4
bso100 3
- OCoss
)10
t(s Crss
uc1
d0.1 1
10 100 VDS(V)
roFigure 12. Normalized gate threshold voltage vs
Ptemperature
teVGS(th)
le(norm)
so1.10
ID=50µA
VDS=VGS
AM12968v1
2
1
0
0 100 200 300 400 500 VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
VGS=10V
ID=2.7A
AM12969v1
Ob 1.00
2.0
0.90
0.80
0.70
-75 -25 25 75 125 TJ(°C)
1.5
1.0
0.5
0
-75 -25 25 75 125 TJ(°C)
DocID024429 Rev 1
7/22
7페이지 | |||
구 성 | 총 22 페이지수 | ||
다운로드 | [ STDLED656.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STDLED656 | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |