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PDF APT5024BFLL Data sheet ( Hoja de datos )
| Número de pieza | APT5024BFLL | |
| Descripción | POWER MOS 7 FREDFET | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APT5024BFLL
APT5024SFLL
500V 22A 0.240Ω
POWER MOS 7 R FREDFET
BFLL
(B)
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switch-
ing losses are addressed with Power MOS 7® by significantly lowering
RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching
losses along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
G
C
E
• Lower Input Capacitance • Increased Power Dissipation
TO-247
D3PAK
(S)
C
GE
SFLL
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT5024BFLL_SFLL
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
500
22
88
±30
±40
265
2.12
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
22
30
960
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 11A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
MIN TYP MAX
500
22
0.240
250
1000
±100
35
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Amps
Ohms
μA
nA
Volts
Microsemi Website - http://www.microsemi.com
1 page  
10 %
t
d(on)
t
r
5%
Gate Voltage
TJ = 125 C
90%
10 %
Drain Current
5%
Drain Voltage
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT15DF60
ID VDS
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT5024BFLL_SFLL
90%
td(off)
Gate Voltage
TJ = 125 C
Drain Voltage
90%
tf
10%
0 Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
D3PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99(.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
5 Page | ||
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