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부품번호 | PTVS12VZ1USKN 기능 |
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기능 | Transient voltage suppressor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile
applications
22 October 2015
Preliminary data sheet
1. General description
Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2
(SOD963) package, designed for transient overvoltage protection.
2. Features and benefits
• Rated peak pulse current: IPPM = 59 A (8/20 µs pulse)
• Rated peak pulse power: PPPM = 2100 W (8/20 µs pulse)
• Dynamic resistance Rdyn = 0.1 Ω
• Reverse current: IRM = 1 nA
• Very low package height: 0.25 mm
3. Applications
• Power supply protection
• Industrial application
• Power management
4. Quick reference data
Table 1.
Symbol
IPPM
Quick reference data
Parameter
peak pulse current
VRWM
reverse standoff
voltage
Conditions
tp = 8/20 µs
tp = 10/1000 μs
Tamb = 25 °C
Min Typ Max Unit
[1][2] - - 59 A
[3][2] - - 10.1 A
- - 12 V
[1] In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
[2] Measured from pin 1 to pin 2.
[3] In accordance with IEC 61643-321 (10/1000 µs current waveform).
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NXP Semiconductors
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
150
IPP
(%)
100
100 % IPP; 10 µs
006aab319
50 % IPP; 1000 µs
50
0
0 1.0 2.0 3.0 4.0
tp (ms)
Fig. 3. 10/1000 µs pulse waveform according to IEC 61643-321
9. Characteristics
Table 6.
Symbol
VRWM
IRM
Cd
VBR
VCL
Characteristics
Parameter
reverse standoff
voltage
reverse leakage
current
diode capacitance
breakdown voltage
clamping voltage
Rdyn
dynamic resistance
Conditions
Tamb = 25 °C
Min Typ Max Unit
- - 12 V
VRWM = 12 V; Tamb = 25 °C
[1] -
1 200 nA
f = 1 MHz; VR = 0 V; Tamb = 25 °C
IR = 10 mA; Tamb = 25 °C
IPPM = 59 A; Tamb = 25 °C; tp = 8/20 µs
IPPM = 10.1 A; Tamb = 25 °C;
tp = 10/1000 μs
IR = 10 A; Tamb = 25 °C
[1]
[2][1]
[3][1]
[4][1]
-
13.3
-
-
-
430
14.4
24.9
16.6
0.1
-
15.4
29
19.9
-
pF
V
V
V
Ω
[1] Measured from pin 1 to 2.
[2] In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
[3] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[4] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
PTVS12VZ1USKN
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 13
4페이지 NXP Semiconductors
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
ESD TESTER
Rd
Cs
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
DUT
(DEVICE
UNDER
TEST)
RG 223/U
50 Ω coax
40 dB
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
10
V
(kV) 8
6
4
2
0
-2
-10 0 10 20 30 40 50 60
t (ns)
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
70
Fig. 12. ESD clamping test setup and waveforms
35 aaa-020141
VCL
(V)
25
2
V
(kV) 0
-2
-4
-6
-8
-10
-10 0 10 20 30 40 50 60 70
t (ns)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
20
VCL
(V)
10
aaa-020142
15
VCL at 30 ns = 15 V
5
0
VCL at 30 ns = -1.6 V
-10
-5
-10 0
10 20 30 40 50 60 70
t (ns)
Fig. 13. Clamped +8 kV pulse waveform
(IEC 61000-4-2 network)
-20
-10 0
10 20 30 40 50 60 70
t (ns)
Fig. 14. Clamped -8 kV pulse waveform
(IEC 61000-4-2 network)
PTVS12VZ1USKN
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
7 / 13
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구 성 | 총 13 페이지수 | ||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |