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PDF BSC020N03LSG Data sheet ( Hoja de datos )
| Número de pieza | BSC020N03LSG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC020N03LS G
Product Summary
V DS
R DS(on),max
ID
30 V
2 mΩ
100 A
PG-TDSON-8
Type
BSC020N03LS G
Package
PG-TDSON-8
Marking
020N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.27
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
page 1
Value
100
100
100
93
28
400
50
180
6
±20
Unit
A
mJ
kV/µs
V
2009-10-22
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
250
10 V
200
5V
4.5 V
4V
150
100
50
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
BSC020N03LS G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
5
3.2 V
4
3.5 V
3
2
3.2 V
3V
2.8 V
3
1
0
0 10 20 30
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
3.5 V
4V
4.5 V
5V
10 V
11.5 V
40 50
300
160
120
80
40
150 °C
25 °C
250
200
150
100
50
0
012345
V GS [V]
0
0
Rev. 1.27
page 5
40 80 120
I D [A]
160
2009-10-22
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC020N03LSG.PDF ] | |
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