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STD95NH02L-1 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STD95NH02L-1
기능 N-CHANNEL STripFET MOSFET
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STD95NH02L-1 데이터시트, 핀배열, 회로
STD95NH02L-1
STD95NH02L
N-channel 24V - 0.0039- 80A - DPAK - IPAK
Ultra low gate charge STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STD95NH02L
)STD95NH02L-1
24V
24V
< 0.005
< 0.005
t(s1. Value limited by wire bonding
ucConduction losses reduced
dSwitching losses reduced
roLow threshold device
80A(1)
80A(1)
te PDescription
oleThe device is based on the latest generation of
sST’s proprietary STripFET™ technology. An
binnovative layout enables the device to also
Oexhibit extremely low gate charge for the most
-demanding requirements in high-frequency DC-
t(s)DC converters. It’s therefore ideal for high-density
converters in Telecom and Computer
capplications.
roduApplication
Obsolete PSwitching applications
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STD95NH02LT4
STD95NH02L-1
Marking
D95NH02L
D95NH02L
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
August 2007
Rev 4
1/16
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16




STD95NH02L-1 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STD95NH02L - STD95NH02L-1
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 250µA, VGS =0
24
V
IDSS
t(s)IGSS
cVGS(th)
roduRDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDS = 20V
VDS = 20V, TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40A
VGS = 5V, ID = 40A
1 µA
10 µA
±100 nA
1V
0.0039 0.005
0.0055 0.009
te PTable 5. Dynamic
oleSymbol
Parameter
bsgfs (1)
) - OCiss
t(sCoss
cCrss
dutd(on)
rotr
Ptd(off)
tetf
le Qg
o Qgs
s Qgd
Ob Qoss(2)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Test conditions
VDS = 10V, ID = 10A
VDS = 15V, f = 1MHz,
VGS = 0
VDD = 12V, ID = 40A
RG = 4.7VGS = 10V
(see Figure 14)
VDD = 12V, ID = 80A,
VGS = 5V, RG = 4.7
(see Figure 15)
VDS =19V, VGS =0V
Min. Typ. Max. Unit
30 S
2070
990
90
20
110
47
20
17
7.6
6.8
22.6
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
Qgls(3)
Third-quadrant gate
charge
VDS < 0V, VGS = 5V
15 nC
f=1MHz Gate DC
RG
Gate Input Resistance
Bias =0 Test Signal
Level =20mV
Open Drain
1.8
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. Qoss.= Coss * Vin, Coss = Cgd + Cgd. See Chapter 4: Appendix A
3. Gate charge for synchronous operation
4/16

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STD95NH02L-1 전자부품, 판매, 대치품
STD95NH02L - STD95NH02L-1
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
uct(s)Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
dvs temperature
temperature
roduct(s) - Obsolete ProFigure 12. Source-drain diode forward
Obsolete Pcharacteristics
Figure 13. Normalized BVDSS vs temperature
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부품번호상세설명 및 기능제조사
STD95NH02L-1

N-CHANNEL STripFET MOSFET

STMicroelectronics
STMicroelectronics

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