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부품번호 | STD95NH02L-1 기능 |
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기능 | N-CHANNEL STripFET MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 16 페이지수
STD95NH02L-1
STD95NH02L
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK
Ultra low gate charge STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STD95NH02L
)STD95NH02L-1
24V
24V
< 0.005Ω
< 0.005Ω
t(s1. Value limited by wire bonding
uc■ Conduction losses reduced
d■ Switching losses reduced
ro■ Low threshold device
80A(1)
80A(1)
te PDescription
oleThe device is based on the latest generation of
sST’s proprietary STripFET™ technology. An
binnovative layout enables the device to also
Oexhibit extremely low gate charge for the most
-demanding requirements in high-frequency DC-
t(s)DC converters. It’s therefore ideal for high-density
converters in Telecom and Computer
capplications.
roduApplication
Obsolete P■ Switching applications
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STD95NH02LT4
STD95NH02L-1
Marking
D95NH02L
D95NH02L
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
August 2007
Rev 4
1/16
www.st.com
16
Electrical characteristics
2 Electrical characteristics
STD95NH02L - STD95NH02L-1
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 250µA, VGS =0
24
V
IDSS
t(s)IGSS
cVGS(th)
roduRDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDS = 20V
VDS = 20V, TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40A
VGS = 5V, ID = 40A
1 µA
10 µA
±100 nA
1V
0.0039 0.005
0.0055 0.009
Ω
Ω
te PTable 5. Dynamic
oleSymbol
Parameter
bsgfs (1)
) - OCiss
t(sCoss
cCrss
dutd(on)
rotr
Ptd(off)
tetf
le Qg
o Qgs
s Qgd
Ob Qoss(2)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Test conditions
VDS = 10V, ID = 10A
VDS = 15V, f = 1MHz,
VGS = 0
VDD = 12V, ID = 40A
RG = 4.7Ω VGS = 10V
(see Figure 14)
VDD = 12V, ID = 80A,
VGS = 5V, RG = 4.7Ω
(see Figure 15)
VDS =19V, VGS =0V
Min. Typ. Max. Unit
30 S
2070
990
90
20
110
47
20
17
7.6
6.8
22.6
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
Qgls(3)
Third-quadrant gate
charge
VDS < 0V, VGS = 5V
15 nC
f=1MHz Gate DC
RG
Gate Input Resistance
Bias =0 Test Signal
Level =20mV
Open Drain
1.8 Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. Qoss.= Coss * ∆ Vin, Coss = Cgd + Cgd. See Chapter 4: Appendix A
3. Gate charge for synchronous operation
4/16
4페이지 STD95NH02L - STD95NH02L-1
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
uct(s)Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
dvs temperature
temperature
roduct(s) - Obsolete ProFigure 12. Source-drain diode forward
Obsolete Pcharacteristics
Figure 13. Normalized BVDSS vs temperature
7/16
7페이지 | |||
구 성 | 총 16 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STD95NH02L-1 | N-CHANNEL STripFET MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |