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PDF IPW90R1K0C3 Data sheet ( Hoja de datos )
| Número de pieza | IPW90R1K0C3 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPW90R1K0C3 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
IPW90R1K0C3
Product Summary
V DS @ T J=25°C
R DS(on),max @ T J= 25°C
Q g,typ
900 V
1.0 Ω
34 nC
PG-TO247
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPW90R1K0C3
Package
PG-TO247
Marking
9R1K0C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
Pulsed drain current 2)
Avalanche energy, single pulse
Avalanche energy, repetitive t AR 2),3)
Avalanche current, repetitive t AR 2),3)
MOSFET dv /dt ruggedness
I D,pulse
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=1.1 A, V DD=50 V
I D=1.1 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
5.7 A
3.6
12
97 mJ
0.37
1.1 A
50 V/ns
±20 V
±30
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
89
-55 ... 150
W
°C
Mounting torque
M3 and M3.5 screws
60 Ncm
Rev. 1.0
page 1
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
8
6
4
2
20 V
10 V
8V
6V
5.5 V
5V
IPW90R1K0C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T J=150 °C
parameter: V GS
10
8
4.5 V
6
10 V
5V
4
4.8 V
4V
4.5 V
4V
2
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T J); I D=3.3 A; V GS=10 V
20
3
0
25 0 2 4 6 8
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); V DS≥20V
parameter: T J
20
10 12
2.5
25 °C
15
2
1.5
98 %
1
typ
0.5
10
150 °C
5
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 1.0
page 5
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPW90R1K0C3.PDF ] | |
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