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Número de pieza | SPI08N80C3 | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPI08N80C3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPI08N80C3
800 V
0.65 Ω
45 nC
PG-TO262-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
SPI08N80C3
Package
PG-TO262-3
Marking
08N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=1.6 A, V DD=50 V
I D=8 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
8
5.1
24
340
0.2
8
50
±20
±30
104
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.91
page 1
2011-09-27
1 page 5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
12
20 V
10 V
6V
9
5.5 V
6
5V
3 4.5 V
SPI08N80C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
3.2
2.8
2.4
2
4.5 V
5 V 5.5 V
6 V 6.5 V
10 V
1.6
20 V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=5.1 A; V GS=10 V
20
1.8
1.6
1.4
1.2
25 0 3 6 9 12 15
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
30
25 °C
25
1.2 20
1
0.8 98 %
typ
0.6
15
10
150 °C
0.4
5
0.2
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.91
page 5
2011-09-27
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SPI08N80C3.PDF ] |
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SPI08N80C3 | Power Transistor | Infineon Technologies |
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