SiHLZ34L PDF 데이터시트 ( Data )

부품번호

SiHLZ34L 기능

기능

Power MOSFET

제조업체

Vishay

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IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

VGS = 5 V

Qgs (nC)

7.1

Qgd (nC)

Configuration

Single

0.05

I2PAK (TO-262)

D2PAK (TO-263)

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb) free and Halogen-free

Lead (Pb) free

D2PAK (TO-263)

SiHLZ34S-GE3

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRLZ34S, SiHLZ34S)

• Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast swichting speed and ruggedized device design that

Power MOSFETs are known for, provides the designer with

an extremely efficient and reliable device for use in a wide

variety of applications.

The D2PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

The through-hole version (IRLZ34L, SiHLZ34L) is available

for low-profile applications.

I2PAK (TO-262)

IRLZ34LPbF

SiHLZ34L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

Single Pulse Avalanche Energyb

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)e

Peak Diode Recovery dV/dtc

VGS at 5 V

TC = 25 °C

TC = 100 °C

TC = 25 °C

TA = 25 °C

VDS

VGS

IDM

EAS

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12).

c. ISD  30 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

LIMIT

± 10

110

0.59

128

3.7

4.5

- 55 to + 175

300d

UNIT

W/°C

V/ns

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90418

S11-1044-Rev. D, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

Document Number: 90418

S11-1044-Rev. D, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L

Vishay Siliconix

D.U.T.

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by Rg

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

- VDD

• D.U.T. - device under test

Driver gate drive

P.W.

Period

P.W.

Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

Note

a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

VDD

ISD

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?90418.

Document Number: 90418

S11-1044-Rev. D, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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[ SiHLZ34L.PDF 데이터시트 ]

Vishay에서 제조한 전자 부품 SiHLZ34L은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.

SiHLZ34L의 기능 및 특징 중 하나는 "Power MOSFET" 입니다.

일반적으로, Vishay에서 제조되는 전자부품들은 우수한 성능과
품질에 대한 신뢰성을 갖추고 있습니다.

구매 문의

일반 IC 문의 : 샘플 및 소량 구매
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관련 데이터시트

부품번호	상세설명 및 기능	제조사
SIHLZ34	Power MOSFET	Vishay
SiHLZ34L	Power MOSFET	Vishay