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PDF DBU103T Data sheet ( Hoja de datos )
| Número de pieza | DBU103T | |
| Descripción | Bipolar Junction Transistor | |
| Fabricantes | Jingdao | |
| Logotipo |  |
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www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
DBU103T
Bipolar Junction Transistor
◆Si NPN
◆RoHS COMPLIANT
1．APPLICATION
Fluorescent Lamp、Electronic Ballast、
and Switch-mode power supplies
2．FEATURES
High voltage capability
Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed
3．PACKAGE
TO-92
4．Electrical Characteristics
4.1 Absolute Maximum Ratings
1 VD
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃
Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
650
400
9
1.5
0.8
18
150
-55～150
V
V
V
A
W
℃
℃
VALUE
TEST CONDITION
UNIT
MIN TYP MAX
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
＊: Pulse test tp≤300μs,δ≤2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
IC=1mA,IE=0
IC=1mA ,IB=0
IE=1mA,IC=0
VCB=650V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
650
400
9
8
15
IC=250mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
1.5
5
V
V
V
10 μA
20 μA
10 μA
30
0.6 V
1.2 V
0.7
0.9 μs
2.5
MHz
Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第 1 页 2013 版
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DBU103T.PDF ] | |
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