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부품번호 | IRFPS30N60K 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | Vishay | ||
로고 | |||
전체 8 페이지수
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
220
64
110
Single
0.16
D
SUPER-247TM
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
Super-247TM
IRFPS30N60KPbF
SiHFPS30N60K-E3
IRFPS30N60K
SiHFPS30N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.1 mH, RG = 25 Ω, IAS = 30 A.
c. ISD ≤ 30 A, dI/dt ≤ 630 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
LIMIT
600
± 30
30
19
120
3.6
520
30
45
450
13
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
1000000
100000
10000
VGS = 0V, f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
C ds
Ciss
1000
Coss
100
Crss
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-toDrain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID= 30A
16
12
VDS= 480V
VDS= 300V
VDS= 120V
8
4
0
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10msec
100 1000 10000
Fig. 8V-DMSax,iDmruamin-StoaSfeouOrcpeerVaotiltnaggeA(rVea)
www.vishay.com
4
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
4페이지 IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
D.U.T
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-+
RG
• dV/dt controlled by RG
+
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
- VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91256.
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
www.vishay.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFPS30N60K | SMPS MOSFET | International Rectifier |
IRFPS30N60K | Power MOSFET ( Transistor ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |