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PDF MBRF20100CT Data sheet ( Hoja de datos )
| Número de pieza | MBRF20100CT | |
| Descripción | 20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBRF20100CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MBRF2040CT thru MBRF20250CT
®
Pb Free Plating Product
MBRF2040CT thru MBRF20250CT
Pb
20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: Section Copper Strip TO-220FP
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Maximum Ratings And Electrical Characteristics
Section Copper Strip TO-220FP
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbol
MBRF2040CT MBRF2060CT MBRF20100CT MBRF20150CT MBRF20200CT MBRF20250CT
Marking Code
MBRF2040CT MBRF2060CT MBRF20100CT MBRF20150CT MBRF20200CT MBRF20250CT
Maximum Recurrent Peak Reverse Voltage
VRRM
40
60
100 150
200 250
Maximum RMS Voltage
VRMS
28
42
70
105 140 175
Maximum DC Blocking Voltage
VDC 40 60 100 150 200 250
Maximum Forward Voltage@10A, TA=25℃
@10A, TA=125℃
@20A, TA=25℃
Operating Temperature
0.70 0.79 0.81
0.87
0.90
0.95
VF 0.57 0.70 0.71 0.77 0.80 0.85
0.84 0.95 0.95
1.0
1.0
-
TJ -50 ~ +150
Unit
V
V
V
V
℃
Parameter
Forward Rectified Current
Forward Surge Current
Reverse Current
Thermal Resistance
Diode Junction Capacitance
Storage Temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM , TA=25℃
VR=VRRM , TA=125℃
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
IR
RΘJA
CJ
TSTG
Min.
-50
Typ.
30
150
Max.
20
150
0.1
10
+150
Unit
A
A
mA
℃/W
pF
℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRF20100CT.PDF ] | |
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