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PDF FLX107MH-12 Data sheet ( Hoja de datos )
| Número de pieza | FLX107MH-12 | |
| Descripción | X / Ku Band Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: ηadd = 33%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLX107MH-12
X, Ku Band Power GaAs FET
DESCRIPTION
The FLX107MH-12 is a power GaAs FET that is designed for general
purpose applications in the X-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
-
-
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Vp
VGSO
P1dB
G1dB
ηadd
VDS = 5V, IDS = 20mA
IGS = -20µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 12.5 GHz
-1.0
-5
29.0
6.5
-
Limit
Typ. Max.
400 600
200 -
-2.0 -3.5
--
30.0 -
7.5 -
33 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 15 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
August 1999
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLX107MH-12.PDF ] | |
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