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부품번호 | STI11NM80 기능 |
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기능 | N-CHANNEL Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 22 페이지수
STB11NM80, STF11NM80
STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on)
max
RDS(on)*Qg
ID
STB11NM80
STF11NM80
STI11NM80 800 V
STP11NM80
STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STI11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
I11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
1/22
www.st.com
22
Electrical characteristics
2 Electrical characteristics
STB/F/I/P/W11NM80
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0)
dv/dt (1) Drain source voltage slope
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA
VDD = 640 V, ID = 11 A,
VGS = 10 V
VDS = 800 V,
VDS = 800 V @125°C
VGS = ±30 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 5.5 A
1. Characteristic value at turn off on inductive load
Min. Typ. Max. Unit
800 V
30 V/ns
10 µA
100 µA
100 nA
34 5V
0.35 0.40 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID= 7.5 A
VDS =25 V, f=1 MHz,
VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDD=640 V, ID = 11 A
VGS =10 V
(see Figure 18)
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=400 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 17)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-8- S
1630
- 750 -
30
43.6
- 11.6 -
21
pF
pF
pF
nC
nC
nC
- 2.7 -
Ω
22 ns
17 ns
--
46 ns
15 ns
4/22 Doc ID 9241 Rev 11
4페이지 STB/F/I/P/W11NM80
Figure 8. Transfer characteristics
Electrical characteristics
Figure 9. Transconductance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Static drain-source on resistance
vs temperature
Doc ID 9241 Rev 11
7/22
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
STI11NM80 | N-CHANNEL Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |