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B30NF10 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 B30NF10
기능 STB30NF10
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B30NF10 데이터시트, 핀배열, 회로
STB30NF10
STP30NF10 - STP30NF10FP
N-channel 100V - 0.038- 35A - D2PAK/TO-220/TO-220FP
Low gate charge STripFET™ II Power MOSFET
General features
Type
STB30NF10
STP30NF10
STP30NF10FP
VDSS
100V
100V
100V
RDS(on)
<0.045
<0.045
<0.045
ID
35A
35A
35A
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Sales type
STB30NF10T4
STP30NF10
STP30NF10FP
Marking
B30NF10
P30NF10
P30NF10FP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
June 2006
Rev 2
1/16
www.st.com
16




B30NF10 pdf, 반도체, 판매, 대치품
Electrical characteristics
STB30NF10 - STP30NF10 - STP30NF10FP
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
100
V
VDS = max ratings
VDS = max ratings,
TC = 125°C
1 µA
10 µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
2
3
4V
VGS = 10V, ID = 15A
0.038 0.045
Table 4.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 15A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 50V, ID = 15A
RG = 4.7VGS = 10V
(see Figure 15)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 80V, ID = 12A,
VGS = 10V
(see Figure 16)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
10 S
1180
180
80
15
40
45
10
40
8
15
55
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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B30NF10 전자부품, 판매, 대치품
STB30NF10 - STP30NF10 - STP30NF10FP
Figure 7. Transconductance
Electrical characteristics
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature
temperature
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