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부품번호 | BC848W 기능 |
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기능 | 100 mA NPN general-purpose transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BC848 series
30 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BC848B
SOT23
BC848W
SOT323
JEITA
-
SC-70
JEDEC
TO-236AB
-
PNP
complement
BC858B
BC858W
1.2 Features
General-purpose transistors
SMD plastic packages
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
BC848B
BC848W
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 30 V
- - 100 mA
200 290 450
110 -
800
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IE = 0 A
hFE DC current gain VCE = 5 V; IC = 10 μA
VCE = 5 V; IC = 2 mA
BC848B
BC848W
VCEsat
VBEsat
VBE
fT
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
VCE = 5 V; IC = 10 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
NF noise figure
VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
Min
-
-
-
-
200
110
-
[1] -
[2] -
[2] -
[3] 580
[3] -
100
-
-
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature.
[3] VBE decreases by approximately 2 mV/K with increasing temperature.
Typ
-
-
-
150
290
-
90
200
700
900
660
-
-
2.5
2
Max
15
5
100
-
450
800
250
600
-
-
700
770
-
3
10
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
10. Soldering
BC848 series
30 V, 100 mA NPN general-purpose transistors
2.90
2.50
0.85 2
1
3.00
1.30
0.85 3
2.70
0.60
(3x)
1.00
3.30
0.50 (3x)
0.60 (3x)
MSA439
Dimensions in mm
Fig 7. Reflow soldering footprint SOT23 (TO-236AB)
3.40
1.20 (2x)
4.60 4.00 1.20
21
3
solder lands
solder resist
occupied area
solder paste
solder lands
solder resist
occupied area
2.80
4.50
preferred transport direction during soldering
MSA427
Dimensions in mm
Fig 8. Wave soldering footprint SOT23 (TO-236AB)
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |