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부품번호 | BC807-25W 기능 |
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기능 | General Purpose Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
BC807-25W, BC807-40W
General Purpose
Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−45
−50
−5.0
−500
V
V
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
460 mW
272 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2.
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = B or C
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 4
1
Publication Order Number:
BC807−25W/D
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
-1.0
TJ = 25°C
-0.8
-0.6 IC =
-500 mA
-0.4
IC = -300 mA
-0.2 IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
IB, BASE CURRENT (mA)
-10
Figure 6. Saturation Region
-100
+1.0
qVC for VCE(sat)
0
-1.0
100
10
-2.0 qVB for VBE
-1.0 -10 -100 -1000
IC, COLLECTOR CURRENT
Figure 7. Temperature Coefficients
1.0
-0.1
Cib
-1.0 -10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
Cob
-100
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4
4페이지 BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
1
1 S 1 mS
100 mS
0.1 10 mS
Thermal Limit
0.01
0.001
0.1
1 10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
100
1000
D = 0.5
100 0.2
0.1
0.05
10 0.02
0.01
1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 18. Thermal Response
1
10
100 1000
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7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |