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PDF 2N4360 Data sheet ( Hoja de datos )
| Número de pieza | 2N4360 | |
| Descripción | P-CHANNEL FIELD EFFECT TRANSISTORS | |
| Fabricantes | New Jersey Semiconductor | |
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<^£mi-Conauctoi t-Proaucts., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
UlSA 2N4342 - 2N4343 - 2N4360
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376'8960
P-CHANNEL FIELD EFFECT TRANSISTORS
DIFUSSED SILICON PLAN.4R TRANSSITORS
• LOW NOISE VOLTAGE -• 0,08 uV//Hz (MAX) @ 100 Hz
• HIGH YI, •• 4000 umhos (MIN)
• LOW rDS (on) •- 350 Q (MAX)
• LOW COST EPOXY PACKAGE
ABSOLUTE MAXIMUM RATINGS (Note 1)
Maximum Temperatures
Operating Junction Temperature
Storage Temperature .
Soldering Temperature (10 seconds time limit)
Maximum Power Dissipation
Total Dissipation at 25°C Case Temperature (Note 2)
at 65°C Case Temperature (Note 2)
at 25°C Ambient Temperature (Note 2)
Maximum Voltages
BVoo/O-/OA
B VDY,SCOV,
BV _
Source to Gate Breakdown Voltage
Drain to Source Breakdown Voltage
Drain to Gate Breakdown Voltage
PHYSICAL DIMENSIONS
.216 n,, ^
.185DIA'
^
"^
125°C
-55°C to +125°C
26(KC
t ^| ' ^\ .250
.120 ) i
.140
.100 I
'
Ceram|cy
;j'i
||
t
1
3 LEADS -,'' fl 0 0
:°f6DlA.
U UU
-400 M'N
1
2N4360
-20 Volts
-20 Volts
-?,0 V"ltS
0.5 Watt
0.3 Watt
l^^-100 DRAIN
.050 -j ;— i /-Lead No. 2
SOURCE
JH-^
GATE
Lead No. 1 -*/1 ,X (\- Lead No. 3
, r*o' I <A
0.2 Watt
2N4342
2N4343 OTOFLAT
-25 Volts
-25 Volts
45- .'V^y
\v <
1
NOTfS All ftmercicrc in inches
^Sl^r '"'•'"
-?« Vnlr«
ELECTRICAL CHARACTERISTICS (25°C Free Air Temperature unless otherwise noted)
Symbol
Characteristic
2N4360
?M4342
2N4343
Min. Typ. Max. Min. Typ,Max Min. Typ. MaxU. nits
Test Conditions
en Equivalent Input Noise Voltage
(f = 100 Hz|
XF Noise Figure
(r = too HZ)
0,02
0.1
•/ Ytj
Y| ?
^ BV,..
:} lrs,
VG., o,
V,,,
VU,O,
•f VGS (off.)
1.,^,
U,,-,(65 C)
ObO
C
C
'i3
r^lon)
R (Y }
'' ls
Forward Transadmittance {i =1.0 kHz)
O'jiput Admittance (f = 1.0kHz)
Gate to SuurO*.- Breakduwn Voltage
Drain Current
C.llf.. tuSnurcf Voltage
G.it<? tiiS«urre Vi.lIJt't
Gale to Source Voltayt.
Gate to Source Cutoff Voltage
Gute Reverse Curreiit
G;ite Reverse Current
Input C:ip.icit:u:cc (f - 1.0 MHz)
Reverse Transfer Cup:icit:iiu:e
(f ' 1.0 MHz)
Drain "On" Resistance (f - i ,0kHz)
FurwarM Tr.lM,sOL.niiuctar.i.ie
(f ^ 1.0 MHz)
2000
20
3.0
0.7
1500
.1000
35
10
5.0
0.15
.002
15
3.0
350
3000
0.08 0.02 0.08
1.5 0.1 1.5
8000 2000 3500 6000 4000
100 25 75
26 25
DO 4.0 7.0 12 10
9.0
0.7 3.0 5.0
1.8
to 5.5
10 0.15 10
0.5 0.002 0.5
20 15 20
5.0 3.0 5.0
700
500
300 700
2500 3000
0.02 0.08
0.1 1.5
6000 8000
35 100
18 30
6.0
0.15
0.002
15
3.0
9.0
10
10
0.5
20
5.0
180 350
5500
(iV/y/Hi
cm
umhos
VD, = -10 V VGS = 0
VDS = - i o v VGS - o
RG = 1.0 MS! BW = 15
VDS = -10 V Vcs = 0
Hz
"mhQ9
Volts
mA
Volts
Volts
Volts
Volts
nA
"A
PF
pF
VDS " '10 V VGS = °
IG = 10 ,,A VDS = 0
Vos = -10 V Vcs = 0
VDS = -10 V ID ^ 0 . 3 mA
VDS = -10 V ID
0.4 mA
VDS = -10 V ID = 1.0 mA
V(,s ' -10 V I0
1.0 HA
VOrfa = 15 V VD_S. - 0
VGS ' i5 V VDS ' °
VDS = - 1 0 V VGS = 0
VDg =-10 V VQS = 0
!
1
Ohms ID = 0
VC! = 0
,.mhos Vn. ' -10 V ¥„ = 0
LJQ
IjO
NOTES:
(1) rhfse r;itint;s ;ire limiting values :ibuve wbii;h the serviceability of ;iny individual semiconductor device may lie impaired,
(2) Thfvse ratings 'Uvtr ;\m j ' i n c t i - m temperature (it 125' C and junction to ca&(?
therm.U re.-iistuncL' of 500 c Wutt (derating f.ictor of 2,0 mW/:C).
thermal resistance of 200' C Watt (derating; f
(3) Buth 2N4342 and 2N4343 typie.il carves apply to 2N4360.
,1 patiT.t'.i:! F.ui'Lhiki pr
,ir of 5.0mW/"C): junction to ambient
NJ Semi-Conductors reserves the right to changetest conditions, parameters limits and package dimensions without
notice information rumisncd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. HoweverNJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N I
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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