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Datasheet BZX79B8V2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX79B8V2 | Zener Diode, Rectifier BZX79B Series
VZ : 2.4 to 75V PD : 500mW
FEATURES :
• Higher zener voltages available on request. • Standard zener voltage tolerance is ± 2% • Other tolerances are available upon request. • Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
ZENER DIODES
DO - 35 G |  EIC | diode |
| 2 | BZX79B8V2 | Silicon Zener Diode, Rectifier BZX79 SERIES
SILICON PLANAR ZENER DIODES
DO-35
min. 1.083 (27.5)
FEATURES
The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request.
max. .150 (3.8)
max. ∅.079 (2.0)
Diodes available in these tolerance series: ±2% B |  General Semiconductor | diode |
| 3 | BZX79B8V2 | Hermetically Sealed Glass Zener Small Signal Product
BZX79B2V4 thru BZX79B75
Taiwan Semiconductor
Hermetically Sealed Glass Zener
FEATURES
- Wide zener voltage range selection: 2.4V to 75V - Through-hole device type mounting - Hermetically sealed glasss - Compression bonded construction - Solder hot dip tin (Sn) lead finish - P |  Taiwan Semiconductor | data |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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