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What is BZX55C18RL?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "500 mW DO-35 Hermetically".


BZX55C18RL Datasheet PDF - ON Semiconductor

Part Number BZX55C18RL
Description 500 mW DO-35 Hermetically
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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BZX55C2V4RL Series
500 mW DO−35 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of siliconoxide passivated junctions. All this in an axiallead
hermetically sealed glass package that offers protection in all common
environmental conditions.
Specification Features:
Zener Voltage Range 2.4 V to 33 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
DO204AH (DO35) Package Smaller than Conventional
DO204AA Package
Double Slug Type Construction
Metallurgical Bonded Construction
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
@ TL 75°C, Lead Length = 3/8
Derate above 75°C
PD
500 mW
4.0 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
65 to
+200
°C
1. Some part number series have lower JEDEC registered ratings.
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 299
GLASS
MARKING DIAGRAM
L
55C
xxx
YWW
L
55Cxxx
Y
WW
= Assembly Location
= Device Code
= (See Table Next Page)
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
BZX55CxxxRL Axial Lead 5000/Tape & Reel
BZX55CxxxRL2* Axial Lead 5000/Tape & Reel
* The “2” suffix refers to 26 mm tape spacing.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
BZX55C2V4RL/D

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BZX55C18RL equivalent
BZX55C2V4RL Series
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + ΔTJL.
ΔTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
ΔTJL = θJLPD.
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(ΔTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
ΔV = θVZTJ.
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
500
400
300
200
100
0
0
LL
2.4−60 V
62−200 V
0.2 0.4 0.6 0.8
L, LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1
1000
7000
5000 TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
+125°C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
+25°C
0.002
0.001
3
4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
http://onsemi.com
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Featured Datasheets

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BZX55C18RLThe function is 500 mW DO-35 Hermetically. ON SemiconductorON Semiconductor

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