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PDF DMC3035LSD Data sheet ( Hoja de datos )

Número de pieza DMC3035LSD
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC3035LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Complementary Pair MOSFETs
Low On-Resistance
N-Channel: 35m@ 10V
61m@ 4.5V
P-Channel: 65m@ -10V
115m@ -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.072g (approximate)
SOP-8L
D2
D1
S2 D2
G2 D2 G2
S1 D1
G1 D1
G1
TOP VIEW
TOP VIEW
Internal Schematic
S2
N-Channel MOSFET
S1
P-Channel MOSFET
Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
6.9
5.8
30
Unit
V
V
A
A
Maximum Ratings P-CHANNEL @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±20
-5
-4.2
-20
Unit
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
PD
RθJA
Tj, TSTG
2
62.5
-55 to +150
Notes:
1. Device mounted on 2oz. copper pads on 2” x 2” FR4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
1 of 7
www.diodes.com
October 2008
© Diodes Incorporated

1 page




DMC3035LSD pdf
DMC3035LSD
P-CHANNEL
20
16 VGS = -10V
12 VGS = -4.5V
20
VDS = -5V
16
12
TA = 150°C
TA = 125°C
TA = 25°C
TA = -55°C
88
4
VGS = -1.5V VGS = -2.5V VGS = -3.0V
0
01 2 3 45
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Output Characteristics
1
VGS = -4.5V
0.1
VGS = -10V
0.01
0
1.6
4 8 12 16
-ID, DRAIN CURRENT (A)
Fig. 12 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
4
0
1
0.14
0.12
0.10
2 3 45
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 11 Typical Transfer Characteristics
TA = 150°C
TA = 125°C
TA = 85°C
6
0.08
TA = 25°C
0.06
0.04
TA = -55°C
0.02
0
0
1,000
24 68
-ID, DRAIN CURRENT (A)
Fig. 13 Typical On-Resistance
vs. Drain Current and Temperature
10
1.4 VGS = -10V
ID = -5.3A
Ciss
1.2
VGS = -4.5V
ID = -4.2A
100
Coss
1.0
Crss
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 14 On-Resistance Variation with Temperature
10
0
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
5 of 7
www.diodes.com
5 10 15 20 25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 15 Typical Capacitance
30
October 2008
© Diodes Incorporated

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