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부품번호 | J412 기능 |
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기능 | P-Channel MOSFET ( Transistor ) - 2SJ412 | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
2SJ412
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−100
−100
±20
−16
−64
60
292
−16
6
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.08
83.3
Unit
°C/W
°C/W
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
RDS (ON) – Tc
0.5
Common source
Pulse test
0.4
ID = −8 A
−4
−8
0.3
0.2 VGS = −4 V
−2, −4
−2
0.1
VGS = −10 V
0
−80 −40
0
40 80 120
Case temperature Tc (°C)
160
Capacitance – VDS
5000
3000
1000
Ciss
500
300 Coss
Common source
100 VGS = 0 V
50 f = 1 MHz
Tc = 25°C
Crss
30
−0.1 −0.3 −1 −3 −10 −30 −100
Drain-source voltage VDS (V)
2SJ412
IDR – VDS
−30
Common source
Tc = 25°C
Pulse test
−10
−5
VGS = −10 V
−3
−1.0
−0.5
−0.3
0
−3
−2
−5
−1
0, 1
0.2 0.4 0.6 0.8
Drain-source voltage VDS (V)
1.0
Vth – Tc
−4
Common source
VDS = −10 V
ID = −1 mA
Pulse test
−3
−2
−1
0
−80 −40 0 40 80 120
Case temperature Tc (°C)
160
PD – Tc
80
60
40
20
0
0 40 80 120 160
Case temperature Tc (°C)
−100
−80
Dynamic Input/Output Characteristic
Common source
ID = −16 A
Tc = 25°C
Pulse test
−20
−16
VDS
−60
−40
−20 V
VDD = −80 V
−12
−40 V
−8
−20
0
0
VGS
20 40 60 80
Total gate charge Qg (nC)
−4
0
100
4 2009-09-29
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J412 | P-Channel MOSFET ( Transistor ) - 2SJ412 | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |