Datasheet.kr   

51N25 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 51N25
기능 FDP51N25
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고 


전체 12 페이지

		

No Preview Available !

51N25 데이터시트, 핀배열, 회로
FDP51N25 / FDPF51N25
N-Channel UniFETTM MOSFET
250 V, 51 A, 60 mΩ
Features
• RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A
• Low Gate Charge (Typ. 55 nC)
• Low Crss (Typ. 63 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
August 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
DD
GDS
TO-220 GDS
G
S
TO-220F
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
FDP51N25
G
TO-220F
LG-formed
S
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
250
51 51*
30 30*
204 204*
± 30
1111
51
32
4.5
V
A
A
A
V
mJ
A
mJ
V/ns
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
320 38
3.7 0.3
-55 to +150
300
W
W/°C
°C
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP51N25
0.39
62.5
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
3.3
62.5
Unit
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
1
www.fairchildsemi.com




51N25 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9-1. Maximum Safe Operating Area
for FDP51N25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 25.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9-2. Maximum Safe Operating Area
for FDPF51N25 / FDPF51N25YDTU
102
101
Operation in This Area
is Limited by R DS(on)
100
10 μs
100 μs
1 ms
10 ms
100 ms
DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
102
101
Operation in This Area
100 is Limited by R DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
4 www.fairchildsemi.com

4페이지










51N25 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
7
www.fairchildsemi.com

7페이지



구       성총 12 페이지
다운로드[ 51N25.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
51N25

FDP51N25

Fairchild Semiconductor
Fairchild Semiconductor

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵