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PDF QM3018M6 Data sheet ( Hoja de datos )
| Número de pieza | QM3018M6 | |
| Descripción | N-Ch 30V Fast Switching MOSFETs | |
| Fabricantes | UBIQ | |
| Logotipo |  |
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QM3018M6
General Description
The QM3018M6 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3018M6 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
N-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS
30V
RDSON
3mΩ
ID
163A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
PRPAK56 Pin Configuration
D
Absolute Maximum Ratings
SSSG
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
IAS
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State
30
±20
163
103
33.5 21
27 17
325
378
70.2
119
52
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
62
25
1.05
Unit
℃/W
℃/W
℃/W
Rev A.03 D102111
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet QM3018M6.PDF ] | |
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