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QM3024N3 PDF 데이터시트 ( Data , Function )

부품번호 QM3024N3 기능
기능 N-Ch 30V Fast Switching MOSFETs
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QM3024N3 데이터시트, 핀배열, 회로
QM3024N3
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3024N3 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3024N3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
30V
RDSON
9 mΩ
ID
46A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X3 Pin Configuration
D
SS SG
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State
30
±20
46
29
17.3 11
13.8 8.7
92
130
34
29
4.2 1.67
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
75
30
4.32
Unit
/W
/W
/W
Rev A.01 D060311




QM3024N3 pdf, 반도체, 판매, 대치품
QM3024N3
N-Ch 30V Fast Switching MOSFETs
10000
1000
Ciss
Coss
100
Crss
F=1.0MHz
10
1 4 7 10 13 16 19
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 SINGLE PULSE
0.001
0.00001
0.0001
0.001
22
Fig.8 Safe Operating Area
0.01
t , Pulse Width (s)
PDM
TON
D = TON/T
T
TJpeak = TC + PDM x RθJC
0.1 1
Fig.9 Normalized Maximum Transient Thermal Impedance
10
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4

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QM3024N3

N-Ch 30V Fast Switching MOSFETs

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