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Número de pieza | Si5480DU | |
Descripción | N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Si5480DU (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! N-Channel 30-V (D-S) MOSFET
Si5480DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.016 at VGS = 10 V
0.022 at VGS = 4.5 V
PowerPAK ChipFET Single
ID (A)a
12
12
Qg (Typ.)
11 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
APPLICATIONS
• Load Switch, PA Switch, and Battery Switch
for Portable Applications
• DC-DC Synchronous Rectification
Marking Code
AD XXX
Lot Traceability
and Date Code
G
D
Part # Code
Bottom View
S
Ordering Information: Si5480DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
IS
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
12a
12a
10.7b, c
8.6b, c
30
12a
2.6b, c
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
34
3
40
°C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 35
30
32
25
24 20
16
Package Limited
8
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si5480DU
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet Si5480DU.PDF ] |
Número de pieza | Descripción | Fabricantes |
Si5480DU | N-Channel 30-V (D-S) MOSFET | Vishay |
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