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Número de pieza | QM3807M6 | |
Descripción | Dual N-Ch Fast Switching MOSFETs | |
Fabricantes | UBIQ | |
Logotipo | ||
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No Preview Available ! General Description
The QM3807M6 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3807M6 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
QM3807M6
Dual N-Ch Fast Switching MOSFETs
Product Summery
BVDSS
30V
30V
RDSON
9mΩ
4mΩ
ID
57A
83A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
PRPAK5X6 Pin Configuration
S2 S2 S2 G2
S1/D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
IAS
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
D1D1D1 G1
Rating
Die1
Die2
30 30
±20
±20
57 83
36 52
12 17.3
9.6 14
130 170
130 317
34 53.8
46 46
22
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Typ.
---
---
Max.
62
2.7
Unit
℃/W
℃/W
Rev A.01 D032912
1 page QM3807M6
Dual N-Ch Fast Switching MOSFETs
10000
1000.00
1000
Ciss
Coss
100
Crss
F=1.0MHz
10
1 4 7 10 13 16 19
VDS , Drain to Source Voltage (V)
22
100.00
10.00
1.00
0.10
TC=25℃
Single Pulse
0.01
0.1
1
VDS (V)
10
Fig.7 Capacitance
1
DUTY=0.5
Fig.8 Safe Operating Area
0.2
0.1 0.1
0.05
0.02
0.01
0.01 SINGLE
0.001
0.00001
0.0001
0.001
t , Pulse Width (s)
0.01
PDM
T ON
T
D = TON/T
TJpeak = TC+PDMXRθJC
0.1
10us
100us
10ms
100ms
DC
100
1
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet QM3807M6.PDF ] |
Número de pieza | Descripción | Fabricantes |
QM3807M6 | Dual N-Ch Fast Switching MOSFETs | UBIQ |
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