|
|
Datasheet QM3809M6 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | QM3809M6 | Dual N-Ch Fast Switching MOSFETs QM3809M6
General Description
The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3809M6 meet the RoHS and Green Product requirement 100% EAS guarant | UBIQ | mosfet |
QM3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
• • • • •
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yel Mitsubishi Electric Semiconductor data | | |
2 | QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
• • • • •
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yel Mitsubishi Electric Semiconductor data | | |
3 | QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
• • • • •
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yel Mitsubishi Electric Semiconductor data | | |
4 | QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
• • • • •
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yel Mitsubishi Electric Semiconductor data | | |
5 | QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
• • • • •
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yel Mitsubishi Electric Semiconductor data | | |
6 | QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
• • • • •
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yel Mitsubishi Electric Semiconductor data | | |
7 | QM30-14P-CF | QM (1.78mm-070) CONNECTORS Hirose Electric connector | |
Esta página es del resultado de búsqueda del QM3809M6. Si pulsa el resultado de búsqueda de QM3809M6 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |