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부품번호 | QM4301S 기능 |
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기능 | N-Ch and P-Ch Fast Switching MOSFETs | ||
제조업체 | UBIQ | ||
로고 | |||
QM4301S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM4301S is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The QM4301S meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
40V
-40V
RDSON
26mΩ
65mΩ
ID
7A
-6A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S1 G1S2 G2
Rating
N-Ch
P-Ch
40 -40
±20
±20
7 -6
5.5 -4
14 -12
28 39
17.8 -20.5
2.5 2.5
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
85
50
Unit
℃/W
℃/W
Rev A.01 D020910
N-Channel Typical Characteristics
12
10 VGS=10V
VGS=7V
8 VGS=5V
6 VGS=4.5V
4
VGS=3V
2
0
0 0.5 1 1.5
VDS Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
12
2
8
TJ=150℃
TJ=25℃
4
0
0.00 0.25 0.50 0.75
VSD , Source-to-Drain Voltage (V)
1.00
Fig.3 Forward Characteristics of Reverse
1.8
1.4
1
0.6
0.2
-50
0 50 100
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
150
QM4301S
N-Ch and P-Ch Fast Switching MOSFETs
40
ID=6A
35
30
25
20
2
468
VGS (V)
10
Fig.2 On-Resistance vs. G-S Voltage
10
VDS=20V
8 ID=6A
6
4
2
0
0 4 8 12
QG , Total Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
2.0
16
1.7
1.4
1.1
0.8
0.5
0.2
-50
0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
150
4
4페이지 QM4301S
N-Ch and P-Ch Fast Switching MOSFETs
1000
F=1.0MHz
Ciss
100.00
10.00
100 1.00
Coss
Crss
10
1
5 -VDS Dr9ain to So13urce Vo1lt7age(V) 21
25
0.10
Tc=25oC
Single Pulse
0.01
0.1 1
-VDS (V) 10
Fig.7 Capacitance
1
DUTY=0.5
Fig.8 Safe Operating Area
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
PDM
T ON
T
D = TON/T
TJpeak = TC+PDMXRθJC
10 100
100us
1ms
10ms
100ms
DC
100
1000
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ QM4301S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
QM4301D | N-Ch and P-Ch Fast Switching MOSFETs | UBIQ |
QM4301S | N-Ch and P-Ch Fast Switching MOSFETs | UBIQ |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |