|
|
Número de pieza | QM2606C1 | |
Descripción | N-Ch and P-Ch Fast Switching MOSFETs | |
Fabricantes | UBIQ | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de QM2606C1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! QM2606C1
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2606C1 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2606C1 meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
-20V
RDSON
90mΩ
240mΩ
ID
1.52A
-1A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT363 (SC-70-6L ) Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
1
Rating
N-Channel P-Channel
20 -20
±12
±12
1.52 -1
1.22 -0.8
7.6 -5
0.33 0.33
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V
V
A
A
A
W
℃
℃
Typ.
---
---
Max.
375
240
Unit
℃/W
℃/W
Rev A.02 D071811
1 page QM2606C1
N-Ch and P-Ch Fast Switching MOSFETs
1000
100
10
1
F=1.0MHz
Ciss
Coss
Crss
5 9 13 17
VDS , Drain to Source Voltage (V)
21
10.00
1.00
0.10
0.01
TA=25℃
Single Pulse
0.00
0.1
1
VDS (V)
10
100us
1ms
10ms
100ms
DC
100
Fig.7 Capacitance
1
DUTY=0.5
Fig.8 Safe Operating Area
0.2
0.1 0.1
0.05
0.02
0.01
0.01 SINGLE
PDM
T ON
T
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
D = TON/T
TJpeak = TA+PDMXRθJA
10 100
1000
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet QM2606C1.PDF ] |
Número de pieza | Descripción | Fabricantes |
QM2606C1 | N-Ch and P-Ch Fast Switching MOSFETs | UBIQ |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |