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PDF QM6003S Data sheet ( Hoja de datos )

Número de pieza QM6003S
Descripción P-Ch 60V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo



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QM6003S
P-Ch 60V Fast Switching MOSFETs
General Description
The QM6003S is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6003S meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-60V
RDSON
60m
ID
-5.7A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter.
z Networking DC-DC Power System
z Load Switch
SOP8 Pin Configuration
DD DD
Absolute Maximum Ratings
S SS G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±20
-5.7
-4.4
-11.5
51.2
-26.6
3.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
36
Unit
/W
/W
Rev A.01 D031810
1

1 page





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