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부품번호 | IN25AA040D 기능 |
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기능 | NONVOLATILE ELECTRICALLY ERASABLE PROM | ||
제조업체 | Integral | ||
로고 | |||
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL
PERIPHERAL INTERFACE (SPI).
DESCRIPTION
The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface.
*The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI).
The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs
are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF:
for IN25АА020N, IN25АА020D
for IN25АА040N, IN25АА040D
2048 bit,
4096 bit;
- Maximum clock frequency, fC:
for 4,5 V ≤ UCC ≤ 5,5 V
for 2,5 V ≤ UCC ≤ 5,5 V
for 1,8 V ≤ UCC ≤ 5,5 V
- Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC
for UCC = 2,5 V, UIL = 0 V, UIH = UCC
3 MHz;
2 MHz;
1 MHz;
5,0 uA
1,0 uA;
- Maximum read current, IOCCR :
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles;
- Write protection block protect none, 1/4, 1/2, or all of storage
array;
- Power on/off data protection circuitry;
- Supply voltage UCC 1,8 … 5,5 V;
- Temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX
DIP
8
1 D SUFFIX
8 SOIC
1
Pin
Name
CS
SO
WP
GND
SI
SCK
HOLD
VCC
Function
Chip Select
Serial Data Output
Write protection
Ground
Serial Data Input
Clock Input
Hold input *
Power Supply
PIN FUNCTIONS
CS 01
SO 02
WP 03
GND 04
08 Vcc
07 HOLD
06 SCK
05 SI
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IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
SPI parameters (-40 °C ≤ Ta ≤ 85 °C)
Sym
bol
Parameter, unit
Mode
fC
Clock frequency,
MHz
CL =
100 pF
tCSS CS setup time, ns
tCSH CS hold time, ns
tSU SI setup time, ns
tHD SI hold time, ns
tCSD
Disable time on CS ,
ns
tR SCK rise time, us
tF SCK fall time, us
tHI SCK high time, ns
tLO SCK low time, ns
tCLD Clock delay, ns
tCLE Clock setup time, ns
tHO Data hold time, ns
tHS
HOLD setup time,
ns
1,8 V ≤ UCC < 2,5 V
Min Max
-1
500 -
475 -
50 -
100 -
475 -
475 -
200 -
tHH HOLD hold time, ns
200 -
2,5 V ≤ UCC < 4,5 V
Min Max
-2
250 -
250 -
50 -
100 -
Not less 500
Not more 2
Not more 2
230 -
230 -
Not less 50
Not less 50
Not less 0
100 -
100 -
4,5 V ≤ UCC ≤ 5,5 V
Min Max
-3
100 -
150 -
30 -
50 -
150 -
150 -
100 -
100 -
Instruction Set
Instruction Format
Instruction
READ
WRITE
WRDI
WREN
IN25АА020N,
IN25АА020D
0000 X011
0000 X010
0000 X100
0000 X110
IN25АА040N,
IN25АА040D
0000 A8011
0000 A8010
0000 0100
0000 0110
Description
Read data from memory array beginning at se-
lected address
Write data to memory array beginning at se-
lected address
Reset the write enable latch (disable write
operations)
Set the write enable latch (enable write opera-
tions)
RDSR
0000 X101
0000 0101
Read status register
WRSR
0000 X001
0000 0001
Write status register
Notes
1 X – Don’t care (low or high).
2 A8 is the 9th address bit necessary to fully address 512 bytes.
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4페이지 IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
Write status register sequence
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
Instruction
Status register
input data
SI 0 0 0 0 0 0 1 7 6 5 4 3 2 1 0
High-Z
SO
Page write sequence
CS
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Instruction
Lower address byte
1st data byte
SI 0 0 0 0 A8 0 1 0 A7 6 5 4 3 2 1 A0 7 6 5 4 3 2 1 0
CS
SCK
SI
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
2nd data byte
3rd data byte
7 6 5 4 3 2 1 07 6 5 4 3 2 1 0
nth data byte (16 max)
7 6 5 432 1 0
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7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ IN25AA040D.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IN25AA040D | NONVOLATILE ELECTRICALLY ERASABLE PROM | Integral |
IN25AA040N | NONVOLATILE ELECTRICALLY ERASABLE PROM | Integral |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |