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부품번호 | QM3005N3 기능 |
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기능 | P-Ch 30V Fast Switching MOSFETs | ||
제조업체 | UBIQ | ||
로고 | |||
QM3005N3
General Description
The QM3005N3 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3005N3 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
P-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS
-30V
RDSON
14mΩ
ID
-42A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X3 Pin Configuration
D
SS SG
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
IAS
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State
-30
±25
-42
-27
-14.3
-9
-11.4
-7.2
-130
273
-50
37
4.2 1.67
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
75
30
3.36
Unit
℃/W
℃/W
℃/W
Rev A.01 D012511
QM3005N3
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1 5 9 13 17 21 25
-VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1
P-Ch 30V Fast Switching MOSFETs
1000.00
100.00
10.00
1.00
0.10
TC=25℃
Single Pulse
0.01
0.1
1
10
-VDS (V)
Fig.8 Safe Operating Area
10us
100us
1ms
10ms
100ms
DC
100
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
PDM
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.1 1
10
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ QM3005N3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
QM3005N3 | P-Ch 30V Fast Switching MOSFETs | UBIQ |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |