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2N690 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2N690
기능 Power Triode Thyristors
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2N690 데이터시트, 핀배열, 회로
2N682, 2N683, and 2N685 – 2N692
Available on
commercial
versions
PNPN Silicon, Reverse-Blocking,
Power Triode Thyristors
Qualified per MIL-PRF-19500/108
DESCRIPTION
This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability
applications.
Qualified Levels:
JAN and JANTX
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N682, 2N683, 2N685, and 2N687 – 2N692.
JAN and JANTX qualifications are available per MIL-PRF-19500/108.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
A general purpose, reverse-blocking thyristor.
TO-208 / TO-48
Package
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Gate Voltage (Peak Total Value)
Maximum Average DC Output Current (1)
Non-repetitive Peak On-State Current (2) @ t = 7 ms
Symbol
TJ
T STG
V GM
IO
I TSM
Value
-65 to +125
-65 to +150
5
16
150
Unit
oC
oC
V(pk)
A
A
Notes:
1. This average forward current is for a maximum case temperature of +65 °C, and 180 electrical degrees
of conduction.
2. Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge
current must not exceed 100 amperes during the first 10 μs after switching from the off (blocking) state
to the on (conducting) state. This time is measured from the point where the thyristor voltage has
decayed to 90 percent of its initial blocking value.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 1 of 6




2N690 pdf, 반도체, 판매, 대치품
2N682, 2N683, and 2N685 – 2N692
ELECTRICAL CHARACTERISTICS (continued)
Parameters / Test Conditions
Reverse blocking current (TC = +120 ºC)
AC method, bias condition D;
f = 60 Hz; VRRM = rated
Forward blocking current (TC = +120 ºC)
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage (TC = +120 ºC; Re = 20 Ω max)
V2 = VDM = 50 V; RL = 140 Ω
V2 = VDM = 100 V; RL = 140 Ω
V2 = VDM = 200 V; RL = 140 Ω
V2 = VDM = 250 V; RL = 650 Ω
V2 = VDM = 300 V; RL = 650 Ω
V2 = VDM = 400 V; RL = 3 k Ω
V2 = VDM = 500 V; RL = 3 k Ω
V2 = VDM = 600 V; RL = 3 k Ω
V2 = VDM = 700 V; RL = 3 k Ω
V2 = VDM = 800 V; RL = 3 k Ω
Reverse blocking current (TC = -65 ºC)
AC method, bias condition D;
f = 60 Hz; VRRM = rated
Forward blocking current (TC = -65 ºC)
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage and current (TC = -65 ºC)
V2 = VD = 6 V; RL = 50 Ω;
Re = 20 Ω maximum
Exponential rate of voltage rise
Bias condition D; TC = +120°C minimum,
dv/dt = 25 v/μs; repetition rate = 60 pps;
test duration = 15 s;
C = 1.0 μF; RL = 50 Ω
VAA = 50 V
VAA = 100 V
VAA = 200 V
VAA = 250 V
VAA = 300 V
VAA = 400 V
VAA = 500 V
VAA = 600 V
VAA = 700 V
VAA = 800 V
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
Symbol
I RRM2
I DRM2
V GT2
I RRM3
I DRM3
V GT3
I GT2
VD
Min.
.25
47
95
190
240
285
380
475
570
665
760
Max.
Unit
5 mA (pk)
5 mA (pk)
V
2 mA (pk)
2 mA (pk)
3V
80 mA
V
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
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