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2N690 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 2N690
기능 Power Triode Thyristors
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2N690 데이터시트 및 2N690 PDF

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2N690 pdf, 반도체, 판매, 대치품
2N682, 2N683, and 2N685 – 2N692
ELECTRICAL CHARACTERISTICS (continued)
Parameters / Test Conditions
Reverse blocking current (TC = +120 ºC)
AC method, bias condition D;
f = 60 Hz; VRRM = rated
Forward blocking current (TC = +120 ºC)
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage (TC = +120 ºC; Re = 20 Ω max)
V2 = VDM = 50 V; RL = 140 Ω
V2 = VDM = 100 V; RL = 140 Ω
V2 = VDM = 200 V; RL = 140 Ω
V2 = VDM = 250 V; RL = 650 Ω
V2 = VDM = 300 V; RL = 650 Ω
V2 = VDM = 400 V; RL = 3 k Ω
V2 = VDM = 500 V; RL = 3 k Ω
V2 = VDM = 600 V; RL = 3 k Ω
V2 = VDM = 700 V; RL = 3 k Ω
V2 = VDM = 800 V; RL = 3 k Ω
Reverse blocking current (TC = -65 ºC)
AC method, bias condition D;
f = 60 Hz; VRRM = rated
Forward blocking current (TC = -65 ºC)
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage and current (TC = -65 ºC)
V2 = VD = 6 V; RL = 50 Ω;
Re = 20 Ω maximum
Exponential rate of voltage rise
Bias condition D; TC = +120°C minimum,
dv/dt = 25 v/μs; repetition rate = 60 pps;
test duration = 15 s;
C = 1.0 μF; RL = 50 Ω
VAA = 50 V
VAA = 100 V
VAA = 200 V
VAA = 250 V
VAA = 300 V
VAA = 400 V
VAA = 500 V
VAA = 600 V
VAA = 700 V
VAA = 800 V
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
Symbol
I RRM2
I DRM2
V GT2
I RRM3
I DRM3
V GT3
I GT2
VD
Min.
.25
47
95
190
240
285
380
475
570
665
760
Max.
Unit
5 mA (pk)
5 mA (pk)
V
2 mA (pk)
2 mA (pk)
3V
80 mA
V
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
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