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PDF QM6001D Data sheet ( Hoja de datos )
| Número de pieza | QM6001D | |
| Descripción | P-Ch 60V Fast Switching MOSFETs | |
| Fabricantes | UBIQ | |
| Logotipo |  |
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QM6001D
P-Ch 60V Fast Switching MOSFETs
General Description
The QM6001D is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6001D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-60V
RDSON
110mΩ
ID
-11.5A
Applications
z Power management in half bridge and inverters
z DC-DC Converter
z LCD / LED Backlight Application
TO252 Pin Configuration
D
Absolute Maximum Ratings
S
G
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±20
-11.5
-8.9
-23
29
-20
16
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
5
Unit
℃/W
℃/W
Rev A.01 D100809
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet QM6001D.PDF ] | |
Hoja de datos destacado
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