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PDF SS8050 Data sheet ( Hoja de datos )
| Número de pieza | SS8050 | |
| Descripción | NPN Silicon Transistors | |
| Fabricantes | MCC | |
| Logotipo |  |
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 1. 25V, 1500mA, 1W, NPN Transistor  Hay una vista previa y un enlace de descarga de SS8050 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
SS8050
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking Code: SS8050
Pin Configuration
C
BE
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
40 --- Vdc
25 --- Vdc
5.0 --- Vdc
--- 0.1 uAdc
--- 0.1 uAdc
--- 0.1 uAdc
hFE(1)
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
hFE(2)
DC Current Gain
(IC=800mAdc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
VEB Base- Emitter Voltage
(IE=1.5Adc)
SMALL-SIGNAL CHARACTERISTICS
85 300 ---
40 --- ---
--- 0.5 Vdc
--- 1.2 Vdc
--- 1.6 Vdc
fT Transistor Frequency
190 --- MHz
(IC=50mAdc, VCE=10Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
C
D
Range
120-200
160-300
NPN Silicon
Transistors
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .170 .190
B .170 .190
C .550 .590
D .010 .020
E .130 .160
G .010 .104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.cnelectr.com
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet SS8050.PDF ] | |
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