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Datasheet SI6404DQ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | Si6404DQ | N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET
Si6404DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.009 at VGS = 10 V
30 0.010 at VGS = 4.5 V
0.014 at VGS = 2.5 V
ID (A) 11 10 8.8
FEATURES • Halogen-free • TrenchFET® Power MOSFETS: 2.5 V Rated • 30 V VDS
APPLICATIONS • Battery Switch • |  Vishay | mosfet |
Si6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | Si6040 | N-Channel Enhancement MOSFET Si6040
N-Channel Enhancement MOSFET
Si6040
Features
·Low On resistance. ·4.5V drive. ·RoHS compliant.
2,4
Package Dimensions
TO-252
1
3
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
I  Nanxin mosfet | | |
| 2 | SI60DC100 | DC Solid-State Relay NEW Series SI
Output to 100A, 1700 Vdc DC Solid-State Relay
FEATURES/BENEFITS • Latest generation of High Voltage IGBT Technology • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient • Ultra low output leakage current • Low control current c  TELEDYNE relay | | |
| 3 | Si6404DQ | N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET
Si6404DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.009 at VGS = 10 V
30 0.010 at VGS = 4.5 V
0.014 at VGS = 2.5 V
ID (A) 11 10 8.8
FEATURES • Halogen-free • TrenchFET® Power MOSFETS: 2.5 V Rated • 30 V VDS
APPLICATIONS • Battery Switch • Vishay mosfet | | |
| 4 | SI6410DQ | 30V N-Channel PowerTrench MOSFET Si6410DQ
October 2001
Si6410DQ
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ra  Fairchild Semiconductor mosfet | | |
| 5 | Si6413DQ | P-Channel 1.8-V (G-S) MOSFET P-Channel 1.8-V (G-S) MOSFET
Si6413DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = - 4.5 V - 20 0.013 at VGS = - 2.5 V
0.016 at VGS = - 1.8 V
ID (A) - 8.8 - 7.6 - 6.8
FEATURES • Halogen-free • TrenchFET® Power MOSFET
APPLICATIONS • Load Switch • PA Switch • Vishay mosfet | | |
| 6 | SI6415DQ | 30V P-Channel PowerTrench MOSFET Si6415DQ
September 2001
Si6415DQ
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage Fairchild Semiconductor mosfet | | |
| 7 | SI6421DQ | P-Channel 12-V (D-S) MOSFET www.DataSheet.co.kr
Si6421DQ
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0105 @ VGS = - 4.5 V - 12 0.0135 @ VGS = - 2.5 V 0.0175 @ VGS = - 1.8 V
D TrenchFETr Power MOSFET ID (A)
- 9.5 - 8.5 - 7.3
APPLICATIONS
D Load Switch
S*
TSSOP-8  Vishay Siliconix mosfet | |
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