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Si7156DP PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 Si7156DP
기능 N-Channel 40-V (D-S) MOSFET
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Si7156DP 데이터시트, 핀배열, 회로
N-Channel 40-V (D-S) MOSFET
Si7156DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
0.0035 at VGS = 10 V
0.0047 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a
50
50
Qg (Typ.)
45 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
APPLICATIONS
• Synchronous Rectification
• Secondary Side DC/DC
D
G
Bottom View
Ordering Information: Si7156DP-T1-E3 (Lead (Pb)-free)
Si7156DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
S
N-Channel MOSFET
Limit
40
± 20
50a
50a
29b, c
23b, c
70
50a
4.9b, c
40
80
83
53
5.4b, c
3.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
18
1.0
23
°C/W
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
1




Si7156DP pdf, 반도체, 판매, 대치품
Si7156DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030
TJ = 150 °C
10
0.024
TJ = 25 °C
1 0.018
ID = 20 A
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.3
0
- 0.3
ID = 5 mA
- 0.6
- 0.9
ID = 250 µA
0.012
0.006
TA = 125 °C
TA = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
- 1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by R DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1 100 ms
1s
0.1 10 s
0.01
0.01
TA = 25 °C
Single Pulse
0.1 1
DC
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09

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Si7156DP 전자부품, 판매, 대치품
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Revision: 02-Oct-12
1 Document Number: 91000

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