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Si7407DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 Si7407DN
기능 P-Channel 12-V (D-S) MOSFET
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Si7407DN 데이터시트, 핀배열, 회로
P-Channel 12-V (D-S) MOSFET
Si7407DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.012 at VGS = - 4.5 V
- 12 0.016 at VGS = - 2.5 V
0.024 at VGS = - 1.8 V
ID (A)
- 15.6
- 13.5
- 11
PowerPAK 1212-8
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFETS: 1.8 V Rated
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• Ultra-Low RDS(on)
Available
RoHS*
COMPLIANT
APPLICATIONS
• Load Switch
• PA Switch
• Battery Switch
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7407DN-T1
Si7407DN-T1-E3 (Lead (Pb)-free)
Si7407DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendationsb, c
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 12
±8
- 15.6
- 9.9
- 11.2
- 7.2
- 30
- 3.2
- 1.3
3.8 1.5
2.0 0.8
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t 10 s
Steady State
Symbol
RthJA
Typical
26
65
Maximum
33
81
Unit
°C/W
Maximum Junction-to-Case
Steady State
RthJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71912
S-80581-Rev. D, 17-Mar-08
www.vishay.com
1




Si7407DN pdf, 반도체, 판매, 대치품
Si7407DN
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.4 50
0.3
0.2
0.1
0.0
- 0.1
ID = 250 µA
40
30
20
10
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.01
0.1
1 10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
IDM Limited
2
1
Duty Cycle = 0.5
10
ID(on)
1 Limited
0.1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
BVDSS Limited
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
www.vishay.com
4
Document Number: 71912
S-80581-Rev. D, 17-Mar-08

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