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SUD50N10-34P PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SUD50N10-34P
기능 N-Channel 100-V (D-S) MOSFET
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SUD50N10-34P 데이터시트, 핀배열, 회로
New Product
SUD50N10-34P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
100 0.034 at VGS = 10 V
0.040 at VGS = 6.0 V
ID (A)a
20
20
Qg (Typ)
24 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• LCD TV Inverter
• LCD Backlight
TO-252
D
RoHS
COMPLIANT
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N10-34P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
20a
20a
5.9b
4.7b
50
20a
2.0b
25
31
56
36
2.5b
1.6b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 74802
S-72068-Rev. A, 08-Oct-07
Symbol
RthJA
RthJC
Typical
38
1.6
Maximum
50
2.2
Unit
°C/W
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SUD50N10-34P pdf, 반도체, 판매, 대치품
SUD50N10-34P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.060
10
TJ = 150 °C
1
0.052
0.044
ID = 7 A
0.1
0.01
TJ = 25 °C
0.036
0.028
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.020
4.0 5.2 6.4 7.6 8.8 10.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
0.5
ID = 250 µA
0.0
64
48
- 0.5
32
- 1.0
16
- 1.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
250
200
150
100
50
0
0.001
0.01 0.1 1 10
Time (s)
Single Pulse Power, Junction-to-Case
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4
0
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
rDS(on) Limited*
10
1 ms
1 10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.01
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74802
S-72068-Rev. A, 08-Oct-07

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SUD50N10-34P 전자부품, 판매, 대치품
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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