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SUD50P08-25L PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SUD50P08-25L
기능 P-Channel 80-V (D-S) MOSFET
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SUD50P08-25L 데이터시트, 핀배열, 회로
New Product
SUD50P08-25L
Vishay Siliconix
P-Channel 80-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 80 0.0252 at VGS = - 10 V
0.029 at VGS = - 4.5 V
ID (A)a
- 50
- 47
Qg (Typ)
55 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
S
RoHS
COMPLIANT
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 80
± 20
- 50a
- 42.5a
- 12.5b, c
- 10.5b, c
- 40
- 50a
- 6.9b, c
- 45
101
136
95
8.3b, c
5.8b, c
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 °C/W.
t 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
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SUD50P08-25L pdf, 반도체, 판매, 대치품
SUD50P08-25L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
40
0.05
TJ = 150 °C
10
TJ = 25 °C
0.04
0.03
0.02
TA = 125 °C
TA = 25 °C
1
0.00
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.4
2.2
2.0 ID = 250 µA
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
100
*Limited by
10 r DS(on)
1
0.1
0.01
TA = 25 °C
Single Pulse
0.01
2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
35
30
25
20
15
10
5
0
0.01
0.1
1 10 100 1000
Time (sec)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
10 ms
100 ms
1s
10 s
dc
0.001
0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
*VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73443
S-71660-Rev. B, 06-Aug-07

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SUD50P08-25L 전자부품, 판매, 대치품
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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SUD50P08-25L

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