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PDF SUM110P08-11 Data sheet ( Hoja de datos )
| Número de pieza | SUM110P08-11 | |
| Descripción | P-Channel 80-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 80-V (D-S) MOSFET
SUM110P08-11
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 80 0.0111 at VGS = - 10 V
ID (A)b
- 110
Qg (Typ)
113 nC
FEATURES
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
TO-263
S
GDS
Top View
Drain Connected to Tab
Ordering Information: SUM110P08-11 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 125 °C
TA = 25 °C
ID
TA = 125 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 125 °C
TA = 25 °C
PD
TA = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 80
± 20
110a
71
23.5b, c
13.6b, c
- 120
110a
- 9b, c
- 75
281
375
125
13.6b, c
4.5b, c
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is °C/W.
t ≤ 10 sec
Steady State
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
Symbol
RthJA
RthJC
Typical
8
0.33
Maximum
11
0.4
Unit
°C/W
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
90 Package Limited
60
1000
100
10
30 1
SUM110P08-11
Vishay Siliconix
0
0 25 50 75 100 125 150 175
TC - (°C)
Max Avalanche and Drain Current
vs. Case Temperature
1
0.5
0.2
0.1
0.1 0.05
0.02
Single
0.1
0.00001 0.0001
0.001
0.01
0.1
tin - (Sec)
Avalanche Current vs. Time
1.0
0.01
0.0001
0.001 0.01 0.1
Normalized Thermal Transient Impedance, Junction-to-Case
1
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73472.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUM110P08-11.PDF ] | |
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