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PDF SUM110P08-11L Data sheet ( Hoja de datos )
| Número de pieza | SUM110P08-11L | |
| Descripción | P-Channel 80 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUM110P08-11L
Vishay Siliconix
P-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0112 at VGS = - 10 V
- 80
0.0145 at VGS = - 4.5 V
ID (A)b
- 110
- 109
Qg (Typ)
85 nC
TO-263
FEATURES
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S
GDS
Top View
Drain Connected to Tab
Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 125 °C
TA = 25 °C
ID
TA = 125 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 125 °C
TA = 25 °C
PD
TA = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 80
± 20
- 110a
- 71
- 23.5b, c
- 13.6b, c
- 120
- 110
- 9b, c
- 75
281
375
125
13.6b, c
4.5b, c
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 40 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
8
0.33
Maximum
11
0.4
Unit
°C/W
Document Number: 73471
For technical questions, contact: [email protected]
www.vishay.com
S12-3071-Rev. C, 24-Dec-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
90 Package Limited
1000.0
100.0
10.0
60
30 1.0
SUM110P08-11L
Vishay Siliconix
0
0 25 50 75 100 125 150 175
TC - (°C)
Max. Avalanche and Drain Current vs. Case Temperature
0.1
0.00001 0.0001
0.001
0.01
0.1
tin - (s)
Avalanche Current vs. Time
1.0
1.00
0.5
0.2
0.1
0.10 0.05
0.02
Single
0.01
0.0001
0.001 0.01 0.1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73471.
Document Number: 73471
For technical questions, contact: [email protected]
www.vishay.com
S12-3071-Rev. C, 24-Dec-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUM110P08-11L.PDF ] | |
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