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PDF SUM90N08-7m6P Data sheet ( Hoja de datos )
| Número de pieza | SUM90N08-7m6P | |
| Descripción | N-Channel 75-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUM90N08-7m6P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
RDS(on) (Ω)
75 0.0076 at VGS = 10 V
ID (A)
90d
Qg (Typ.)
58
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
TO-263
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N08-7m6P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
75
± 20
90d
81
200
50
125
150b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69578
S-80799-Rev. B, 14-Apr-08
Symbol
RthJA
RthJC
Limit
40
1
Unit
°C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 1000
100
SUM90N08-7m6P
Vishay Siliconix
Limited by RDS(on)*
10
0.000001 0.00001
0.0001
0.001
0.01
tin (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
Single Pulse
10 100 µs
1 ms
1 10 ms, 100 ms
1 s, 10 s, DC
0.1 TA = 25 °C
Single Pulse
BVDSS
0.01
0.1
* VGS
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69578.
Document Number: 69578
S-80799-Rev. B, 14-Apr-08
www.vishay.com
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