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PDF IXTA160N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTA160N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Advance Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T
IXTA 160N085T
IXTP 160N085T
VDSS =
ID25 =
=RDS(on)
85 V
160 A
6.0 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGSM
ID25
IDRMS
IDM
IAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TL
M
d
Weight
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
10
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
85 V
85 V
±20 V
160 A
75 A
350 A
75 A
1.0 J
3 V/ns
360
-55 ... +175
175
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
5.5 g
4g
3g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
85 V
V
GS(th)
V = V , I = 1 mA
DS GS D
2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 50 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
5.0 6.0 m Ω
G
D
S
TO-220 (IXTP)
(TAB)
G DS
TO-263 (IXTA)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99347(02/05)
1 page  
IXTA 160N085T IXTP 160N085T
IXTQ 160N085T
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXTA160N085T.PDF ] | |
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