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PDF Si4462-A1 Data sheet ( Hoja de datos )
| Número de pieza | Si4462-A1 | |
| Descripción | LOW-CURRENT TRANSCEIVER | |
| Fabricantes | Silicon Laboratories | |
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Si4464/63/62/61/60-A1
HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER
Features
Frequency range = 142–1050 MHz Power supply = 1.8 to 3.6 V
Receive sensitivity = –126 dBm Excellent selectivity performance
Modulation
50 dB adjacent channel
(G)FSK & 4(G)FSK
> 73 dB blocking at 1 MHz
OOK & ASK
Antenna diversity and T/R switch control
Max output power
Highly configurable packet handler
+20 dBm (Si4464/63/62)
TX and RX 64 byte FIFOs
+13 dBm (Si4461)
Auto frequency control (AFC)
PA support for +27 dBm
Automatic gain control (AGC)
Low active power consumption Low BOM
10/13 mA RX
19 mA TX at +10 dBm (Si4460)
Low Battery Detector
Temperature Sensor
20-Pin QFN package
Ultra low current powerdown modes IEEE 802.15.4g compliant
30 nA shutdown, 50 nA standby FCC Part 90 Mask D (Si4463)
Data rate = 0.123 kbps to 1Mbps
Fast wake and hop times
Applications
Smart metering (802.15.4g & Mbus)
Remote control
Home security and alarm
Telemetry
Garage and gate openers
Remote keyless entry
Home automation
Industrial control
Sensor networks
Health monitors
Description
Pin Assignments
SDN 1 20 19 18 17 16
RXp 2
15 nSEL
RXn 3
TX 4
GND
PAD
14 SDI
13 SDO
NC 5
12 SCLK
6 7 8 9 10 11 nIRQ
Silicon Laboratories' Si446x devices are high-performance, low current
transceivers covering the sub-GHz frequency bands from 142 to
1050 MHz. The radios are part of the EZRadioPRO family which includes
a complete line of transmitters, receivers, and transceivers to cover a
wide range of applications. All parts offer outstanding sensitivity of
–126 dBm while achieving extremely low active and standby current
consumption. The Si4464 offers continuous frequency coverage across
the entire sub-GHz band from 142–1050 MHz with extremely fine
frequency resolution. The Si4463 includes optimal phase noise, blocking,
and selectivity performance for narrow band and licensed band
applications such as FCC Part90 and 169 MHz wireless Mbus. The 50 dB
adjacent channel selectivity with 25 kHz channel spacing ensures robust
receive operation in harsh RF conditions, which is particularly important
for narrowband operation. The Si4464/63/62 offers exceptional output
power of up to +20 dBm with outstanding TX efficiency. The high output
power and sensitivity results in an industry leading link budget of 146 dB
allowing extended ranges and highly robust communication links. The
Si4460 active mode TX current consumption of 19 mA at +11 dBm and
RX current of 10 mA coupled with extremely low standby current and fast
wake times ensure extended battery life in the most demanding
applications. The Si4463/62 can achieve up to +27 dBm output power
with built in ramping control of a low-cost, external FET. The devices are
compliant with all worldwide regulatory standards: FCC, ETSI, and ARIB.
All devices are designed to be compliant with 802.15.4g and WMbus
smart metering standards.
Patents pending
Confidential Rev 0.2 6/11
Copyright © 2011 by Silicon Laboratories
Si4464/63/62/61/60
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Silicon Laboratories Confidential. Information contained herein is covered under non-disclosure agreement (NDA).
1 page  
Si4464/63/62/61/60-A1
Table 2. Synthesizer AC Electrical Characteristics1
Parameter
Synthesizer Frequency
Range—Si4463/62/61/60
Symbol
FSYN
Conditions
Min Typ Max Units
142 — 175 MHz
284 — 350 MHz
425 — 525 MHz
850 — 1050 MHz
Synthesizer Frequency
Range—Si4464
FSYN
142 — 1050 MHz
Synthesizer Frequency
Resolution2
FRES-960
FRES-525
850–1050 MHz
425–525 MHz
— 57.22 —
— 28.61 —
Hz
Hz
FRES-350
283–350 MHz
— 19.07 — Hz
FRES-175
142–175 MHz
— 9.54 —
Hz
Synthesizer Settling Time2 tLOCK Measured from exiting Ready mode with — 50 —
XOSC running to any frequency.
Including VCO Calibration.
µs
Phase Noise2
L(fM)
F = 10 kHz, 460MHz
F = 100 kHz, 460MHz
— –106 — dBc/Hz
— –110 — dBc/Hz
F = 1 MHz, 460MHz
— –123 — dBc/Hz
F = 10 MHz, 460MHz
— –130 — dBc/Hz
Notes:
1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in the "Production Test Conditions" section in "1.1. Definition of Test Conditions" on page 11.
2. Guaranteed by qualification. Qualification test conditions are listed in the "Qualification Test Conditions" section in "1.1.
Definition of Test Conditions" on page 11.
Confidential Rev 0.2
5
5 Page 
Si4464/63/62/61/60-A1
1.1. Definition of Test Conditions
Production Test Conditions:
TA = +25 °C
VDD = +3.3 VDC
Sensitivity measured at 919 MHz
TX output power measured at 915 MHz
External reference signal (XOUT) = 1.0 VPP at 30 MHz, centered around 0.8 VDC
Production test schematic (unless noted otherwise)
All RF input and output levels referred to the pins of the Si4463/62/61 (not the RF module)
Qualification Test Conditions:
TA = –40 to +85 °C
VDD = +1.8 to +3.6 VDC
Using TX/RX Split Antenna reference design or production test schematic
All RF input and output levels referred to the pins of the Si4463/62/61 (not the RF module)
Confidential Rev 0.2
11
11 Page | ||
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| PDF Descargar | [ Datasheet Si4462-A1.PDF ] | |
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