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부품번호 | FGH20N60SFDTU_F085 기능 |
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기능 | 20A Field Stop IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FGH20N60SFDTU_F085
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20A
• High Input Impedance
• Fast Switching
• RoHS Compliant
• Qualified to Automotive Requirements of AEC-Q101
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
April 2015
•
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Automo-
tive Chargers, Inverter, and other applications where low con-
duction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2015 Fairchild Semiconductor Corporation
FGH20N60SFDTU_F085 Rev. 1.0
1
C
G
E
Ratings
600
20
30
40
20
60
165
66
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
oC
oC
oC
Typ.
0.76
2.51
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
©2015 Fairchild Semiconductor Corporation
FGH20N60SFDTU_F085 Rev. 1.0
4
www.fairchildsemi.com
4페이지 Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
Figure 23.Transient Thermal Impedance of IGBT
PDM
t1
t2
©2015 Fairchild Semiconductor Corporation
FGH20N60SFDTU_F085 Rev. 1.0
7
www.fairchildsemi.com
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGH20N60SFDTU_F085 | 20A Field Stop IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |