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PDF SPV1001N Data sheet ( Hoja de datos )

Número de pieza SPV1001N
Descripción Cool bypass switch
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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SPV1001N
Cool bypass switch for photovoltaic applications
Features
SPV1001N30 IF=12.5 A, VR=30 V
SPV1001N40 IF=12.5 A, VR=40 V
Very low forward voltage drop
Very low reverse leakage current
150 °C operating junction temperature
Applications
Photovoltaic panels
Description
The SPV1001N is a system-in-package solution
for photovoltaic applications to perform cool
bypass rectification similar to that of a
conventional Schottky diode but with much lower
forward voltage drop and reverse leakage current.
The device consists of a power MOSFET
transistor which charges a capacitor during the
OFF time, and drives its gate during the ON time
using the charge previously stored in the
capacitor.
The ON and OFF times are set to reduce the
average voltage drop across the drain and source
terminals, resulting in reduced power dissipation.
Anodo
Catodo
PQFN 5 x 6 mm
Table 1.
Device summary
Order codes
SPV1001N30
SPV1001N40
November 2011
Package
PQFN 5 x 6 mm
Doc ID 018938 Rev 2
Packaging
Tape and reel
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SPV1001N pdf
SPV1001N
Device description
Figure 1.
Average forward power dissipation Figure 2.
vs average forward current @ 25°C
of ambient temperature
Average forward power dissipation
vs average forward current @ 75°C
of ambient temperature
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Figure 3. Reverse current
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Doc ID 018938 Rev 2
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